NOT KNOWN FACTS ABOUT N TYPE GE

Not known Facts About N type Ge

s is usually that with the substrate content. The lattice mismatch results in a significant buildup of strain Electricity in Ge layers epitaxially grown on Si. This pressure Power is mainly relieved by two mechanisms: (i) era of lattice dislocations in the interface (misfit dislocations) and (ii) elastic deformation of each the substrate along with

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